?2001 fairchild semiconductor corporation rev. a1, june 2001 KSC2328A npn epitaxial silicon transistor absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted h fe classification symbol parameter ratings units v cbo collector-base voltage 30 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 5 v i c collector current 2 a p c collector power dissipation 1 w t j junction temperature 150 c t stg storage temperature -55 ~ 150 c symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c =100 a, i e =0 30 v bv ceo collector-emitter breakdown voltage i c =10ma, i b =0 30 v bv ebo emitter-base breakdown voltage i e =1ma, i c =0 5 v i cbo collector cut-off current v cb =30v, i e =0 100 na i ebo emitter cut-off current v eb =5v, i c =0 100 na h fe dc current gain v ce =2v, i c =500ma 100 320 v be (on) base-emitter on voltage v ce =2v, i c =500ma 1.0 v v ce (sat) collector-emitter saturation voltage i c =1.5a, i b =0.03a 2.0 v f t current gain bandwidth product v ce =2v, i c =500ma 120 mhz c ob collector output capacitance v cb =10v,i e =0, f=1mhz 30 pf classification o y h fe 100 ~ 200 160 ~ 320 KSC2328A audio power amplifier applications ? complement to ksa928a ? collector power dissipation : p c =1w ? 3 watt output application to-92l 1 1. emitter 2. collector 3. base
?2001 fairchild semiconductor corporation KSC2328A rev. a1, june 2001 typical characteristics figure 1. static characteristic figure 2. dc current gain figure 3. collector-emitter saturation voltage figure 4. base-emitter on voltage figure 5. safe operating area figure 6. power derating 024681012141618 0 200 400 600 800 1000 1200 1400 i b = 6ma i b = 1ma i b = 7ma i b = 5ma i b = 4ma i b = 3ma i b = 2ma i c [ma], collector current v ce [v], collector-emitter voltage 1 10 100 1000 10 100 1000 v ce = 2v h fe , dc current gain i c [ma], collector current 1 10 100 1000 0.01 0.1 1 i c = 50 i b ta = 25 o c v be (sat), v ce (sat)[v], saturation voltage i c [ma], collector current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 200 400 600 800 1000 1200 1400 v ce = 2v i c [ma], collector current v be [v], base-emitter voltage 0.1 1 10 100 0.01 0.1 1 10 v ceo (max) i c (max) pulse dc operating t c =25 o c 1s i c (max) 1ms i c [a], collector current v ce [v], collector-emitter voltage 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 p c [w], power dissipation t a [ o c], amibient temperature
package demensions ?2001 fairchild semiconductor corporation rev. a1, june 2001 KSC2328A dimensions in millimeters 4.90 0.20 0.50 0.10 1.27typ [1.27 0.20 ] 0.45 0.10 0.45 0.10 0.80 0.10 0.70max. 1.00max. 2.54 typ 8.00 0.20 1.70 0.20 1.00 0.10 13.50 0.40 3.90 0.20 3.90 0.20 1.45 0.20 to-92l
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